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A Product Line of Diodes Incorporated
ZXTN620MA
80V NPN LOW SATURATION TRANSISTOR
Features and Benefits
* * * * * * * * * * * BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage (185mV max @ 1A) RSAT = 68 m for a low equivalent On-Resistance hFE specified up to 5A for high current gain hold up Low profile 0.6mm high package for thin applications RJA efficient, 60% lower than SOT23 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: DFN2020B-3 Case Material: Molded Plastic. "Green" Molding Compound. Terminals: Pre-Plated NiPdAu leadframe. Nominal Package Height: 0.6mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.01 grams (approximate)
Applications
* * * * * MOSFET Gate Driving DC-DC Converters Charging circuits Motor Control Power switches
DFN2020B-3
C B
E
Top View
Bottom View
Device Symbol
Bottom View Pin-Out
Ordering Information
Product ZXTN620MATA
Notes:
Marking SE
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 3000
1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
Marking Information
SE
SE = Product Type Marking code
Top View
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
Maximum Ratings @TA = 25C unless otherwise specified
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current (Note 3) (Note 4) Symbol VCBO VCEO VEBO ICM IC IB Limit 100 80 7 5 3.5 3.8 1 Unit V
A
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
Notes:
Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 5)
2
RJA RJL TJ, TSTG
Value 1.5 12 2.45 19.6 83 51 16.8 -55 to +150
Unit W mW/C
C/W C
3. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 4. Same as note (3), except the device is measured at t 5 sec. 5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
Thermal Characteristics
2.0
Limited
Max Power Dissipation (W)
IC Collector Current (A)
10
VCE(SAT)
1.5
1
DC
1s 100ms 10ms 1ms 100us
10 sqcm Single 1oz Cu T amb=25C
1.0
0.1
0.5
0.01 0.1
Single Pulse, Tamb=25C
1
10
100
0.0 0 25 50 75 100 125 150
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
225
10 sqcm Single 1oz Cu
Derating Curve
Thermal Resistance (C/W)
Thermal Resistance (C/W)
80 60
200 175 150 125 100 75 50 25 0 0.1 1
2oz copper 1oz copper
D=0.5
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100
1m
10m 100m
1
10
100
1k
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T amb=25C T j max=150C Continuous
Thermal Resistance v Board Area
PD Dissipation (W)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1
2oz copper
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
3 of 7 www.diodes.com
December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min 100 80 7 200 300 110 60 20 100 Typ 180 110 8.2 450 450 170 90 30 10 15 45 145 160 240 0.96 1.09 11.5 160 86 1128 Max 100 100 100 900 20 60 185 200 340 1.05 1.175 18 Unit V V V nA nA nA Test Condition IC = 100 A IC = 10 mA IE = 100 A VCB = 80V VEB = 6V VCE = 65V IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 1A, VCE = 2V IC = 1.5A, VCE = 2V IC = 3A, VCE = 2V IC = 5A, VCE = 2V IC = 0.1A, IB = 10mA IC = 0.5A, IB = 50mA IC = 1A, IB = 20mA IC = 1.5A, IB = 50mA IC = 3.5A, IB = 300mA IC = 3.5A, VCE = 2V IC = 3.5A, IB = 300mA VCB = 10V. f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 1A IB1 = IB2 = 25mA
Static Forward Current Transfer Ratio (Note 6)
hFE
-
Collector-Emitter Saturation Voltage (Note 6)
VCE(sat)
mV
Base-Emitter Turn-On Voltage (Note 6) Base-Emitter Saturation Voltage (Note 6) Output Capacitance Transition Frequency Turn-On Time Turn-Off Time
Notes:
VBE(on) VBE(sat) Cobo fT ton toff
V V pF MHz ns ns
6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2%.
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
Typical Electrical Characteristics
0.25
Tamb=25C IC/IB=50
100m
0.20
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=10
0.15 0.10 0.05 0.00 1m
100C 25C -55C
10m
IC/IB=100
IC/IB=20 IC/IB=50
1m 1m
10m
100m
1
10
10m
100m
1
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
1.4 1.2
VCE=2V 100C
VCE(SAT) v IC
630
1.0
IC/IB=50
0.8 0.6 0.4 0.2 0.0 1m
25C
VBE(SAT) (V)
1.0
450 360 270
-55C
Typical Gain (hFE)
540
Normalised Gain
0.8
-55C
0.6
25C 100C
180 90
0.4 1m 10m 100m 1
10m
100m
1
0 10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
5 of 7 www.diodes.com
December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
Package Outline Dimensions
A3 A SEATING PLANE A1 D D2 Z L D4
E E2
E4
b e e
DFN2020B-3 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.152 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.22 1.42 1.32 D4 0.56 0.76 0.66 e 0.65 E 1.95 2.075 2.00 E2 0.79 0.99 0.89 E4 0.48 0.68 0.58 L 0.25 0.35 0.30 Z 0.225 All Dimensions in mm
Suggested Pad Layout
X Y1
Y
G
X1 Y2 C
Dimensions C G X X1 Y Y1 Y2
Value (in mm) 1.30 0.24 0.35 1.52 1.09 0.47 0.50
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
6 of 7 www.diodes.com
December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTN620MA
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safetycritical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
7 of 7 www.diodes.com
December 2010
(c) Diodes Incorporated

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